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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1292 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1832 Excellent DC current gain characteristics Wide area of safe operation APPLICATIONS For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM Base HAN C PARAMETER IN Collector-base voltage SEM GE Open base CONDITIONS OND IC TOR UC VALUE -60 -60 -5 -5 -10 UNIT V V V A A Open emitter Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Open collector TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 30 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-1mA , IB=0 IC=-50|I IE=-50|I A , IE=0 A , IC=0 MIN -60 -60 -5 2SB1292 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Cob TYP. MAX UNIT V V V IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-60V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A ; VCE=-5V 100 12 -1.5 -1.5 -10 -10 320 |I |I V V A A Transition frequency F Output capacitance hFE Classifications E 100-200 HAN INC 160-320 SEM GE IE=0 ; VCB=-10V ,f=1MHz OND IC TOR UC 150 MHz pF 2 Inchange Semiconductor Product Specification Silicon Power Transistors PACKAGE OUTLINE 2SB1292 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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